Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors
نویسندگان
چکیده
منابع مشابه
Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors
Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current-voltage (I-V) characterization. The static I-V dependencies demonstrate the high quality of fabricated silicon FETs without leakage current. Transport and noise properties of NW FET structures were in...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2018
ISSN: 1931-7573,1556-276X
DOI: 10.1186/s11671-018-2494-5